NDLI: Low Ron and high robustness ESD protection design for low-voltage power clamp application

Content Provider	IET Digital Library
Author	Song, Bo Bae Koo, Yong Seo
Abstract	An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon-controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving capacity due to its low on-resistance and high ESD robustness in comparison with the conventional SCR-based ESD protection circuit. The conventional SCR-based ESD protection circuit and the proposed ESD protection circuit were fabricated using a 0.18 µm bipolar CMOS-double diffused metal-oxide semiconductor transistor (DMOS) process, and their electrical characteristics and ESD robustness were comparatively analysed using transmission line pulse measurements.
Starting Page	1554
Ending Page	1555
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 18, Sep (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/18
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.2391
Journal	Electronics Letters
Publisher Date	2016-08-09
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar CMOS-DMOS Process Bipolar Integrated Circuit CMOS Integrated Circuit Electrostatic Discharge Electrostatic Discharge Protection Circuit Electrostatics Integrated Circuit Design Integrated Circuit ESD Protection Design Layout Low-voltage Power Clamp Mixed Technology Integrated Circuit Modelling And Testing Power Electronics Power Integrated Circuit Power Supply Pulse Measurement SCR Semiconductor Integrated Circuit Design Silicon Controlled Rectifier Supervisory Circuit Thyristors Transmission Line Transmission Line Pulse Measurement Voltage 5 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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