NDLI: ESD protection design and enhancement in the power 60-V n-channel LDMOS by embedded-SCR anode islands

Content Provider	IET Digital Library
Author	Chen, S. L. Chen, K. J. Chen, H. W.
Abstract	An electrostatic discharge (ESD) strengthening design of high-voltage (HV) n-channel laterally diffused metal–oxide semiconductor (nLDMOS) transistors combined with embedded-SCR anode islands is investigated. After a systematic layout implementation and analysis, the anti-ESD robustness [or secondary breakdown current (I t2)] of drain pnp-arranged and SCR isolated-type DUTs were higher than 7-A (ESD reliability improvements of these nLDMOS-SCR devices were more than 282.5% (199.2%) higher than that of the pure nLDMOS (pnp-stripe) component. Also, it can be found that the ESD robustness of the pnp-arranged type is greater than the npn-arrangement. Therefore, an adequate architecture of an HV nLDMOS device embedded with an SCR (pnp-arranged) and SCR isolated manner can gain high ESD-reliability immunity.
Starting Page	1639
Ending Page	1640
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 19, Sep (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/19
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.2232
Journal	Electronics Letters
Publisher Date	2016-08-16
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Anti-ESD Robustness Design And Testing Drain Pnp-arranged Type Electrostatic Discharge Electrostatic Discharge Strengthening Design Electrostatics Embedded-SCR Anode Islands Equivalent Circuit ESD Protection Design ESD Reliability Improvements ESD Robustness ESD Strengthening Design ESD-reliability Immunity High-voltage N-channel Laterally Diffused Metal-oxide Semiconductor Transistors HV NLDMOS Device Insulated Gate Field Effect Transistors MOS-controlled Thyristors NLDMOS-SCR Device Npn-arrangement Pnp-stripe Component Power MOSFET Power N-channel LDMOS Power Semiconductor Device Reliability SCR Isolated-type DUT Secondary Breakdown Current Semiconductor Device Modelling Semiconductor Device Reliability Systematic Layout Implementation Voltage 60 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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