NDLI: Resistive switching characteristics of PECVD-deposited porous SiO2-based electrochemical metallisation memory cells

Content Provider	IET Digital Library
Author	Zhou, Jumei
Abstract	Porous silicon dioxide (SiO2) solid-electrolyte was prepared by the plasma enhanced chemical vapour deposition (PECVD) method using silane and oxygen as reactive gases. The resistive switching characteristics of the ∼280 nm-thick porous SiO2-based electrochemical metallisation memory cells were investigated. The SEM and TEM images showed that the PECVD-deposited SiO2 film was composed of nanogranular SiO2 particles with a plenty of nano-channels. The electrical measurements showed that the silver/porous SiO2/indium tin oxide vertical cells exhibited good resistive switching behaviours with low switching voltage (<1.0 V) and good retention performance. Such porous SiO2-based devices are promising for memory-based flexible electronics applications.
Starting Page	965
Ending Page	966
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 11, May (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/11
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.4058
Journal	Electronics Letters
Publisher Date	2016-04-04
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Chemical Vapour Deposition Electrochemical Conversion And Storage Electrochemical Device Electrochemical Metallisation Memory Cell Integrated Memory Circuit Memory Circuit Metallisation Metallisation And Interconnection Technology Nanochannels Nanogranular Particle Nanoparticle PECVD Plasma CVD Plasma Enhanced Chemical Vapour Deposition Porous Material Porous Silicon Dioxide Solid-electrolyte Resistive Switching Characteristic Retention Performance SEM Semiconductor Storage Silicon Compound SiO2-ITO Switching TEM
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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