NDLI: Endurance of magnetic tunnel junctions under dynamic voltage stress

Content Provider	IET Digital Library
Author	Choi, C. M. Sukegawa, H. Mitani, S. Song, Y. H.
Abstract	MgAl2O4 (MAO)-based magnetic tunnel junctions (MTJs) with an MAO thickness of ∼1.25 nm are fabricated and their cycling characteristics under dynamic voltage stress are evaluated. The speed of breakdown strongly depended on the pulse polarities used, bipolar, positive (+) unipolar, and negative (−) unipolar. The bipolar condition yielded more rapid breakdown under cycling. Between the two unipolar conditions, positive bias yielded more rapid breakdown than negative bias; the difference between these is understood to arise from the conditions of the interface between the MAO and ferromagnetic layers. Among apparently normal MTJ cells showing little resistance drift, 20% were degraded during a long cycling test in the bipolar stress condition. Thus, the use of bipolar voltage stress is essential to screen for potentially defective MTJs, and the asymmetric condition at the interface is minimised by process control for application of the simple unipolar bias condition.
Starting Page	1146
Ending Page	1148
Page Count	3
ISSN	00135194
Volume Number	53
e-ISSN	1350911X
Issue Number	Issue 16, Aug (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/53/16
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.1579
Journal	Electronics Letters
Publisher Date	2017-07-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Condition Bipolar Stress Condition Bipolar Voltage Stress Cycling Testing Dielectric Breakdown And Discharges Dynamic Voltage Stress Evaluation Electric Breakdown Ferromagnetic Layer Ferromagnetic Material Magnesium Compound Magnetic Tunnel Junction Magnetic Tunnelling Magneto-acoustic Wave Device Magnetoresistive Wave Device Magnetostrictive And Magnetostatic Wave Device MgAl2O4 MRAM Device MTJ MTJ Cell Negative Unipolar Positive Unipolar Process Control Pulse Polarity Storage Application
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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