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Content Provider | IET Digital Library |
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Author | Jang, Sheng Lyang Lin, Yan Cu |
Abstract | A 2.48 GHz class-C voltage controlled oscillator (VCO) without any dynamic back bias circuit is presented. The VCO uses three-path high Q-factor inductor as the low loss resonator and class-C cross-coupled nMOSFET pairs for high dc/RF conversion efficiency and direct cross-coupled pMOSFET for dc current reuse. At the supply voltage of 1.2 V, the core power consumption is 0.24 mW. The phase noise of the VCO is −124 dBc/Hz and the VCO figure of merit is −197.0 dBc/Hz. The VCO was implemented in the TSMC standard 0.18 μm SiGe BiCMOS process and occupies a die area of 0.799 × 0.809 mm2. |
Starting Page | 1186 |
Ending Page | 1188 |
Page Count | 3 |
ISSN | 00135194 |
Volume Number | 53 |
e-ISSN | 1350911X |
Issue Number | Issue 17, Aug (2017) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/53/17 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2017.1845 |
Journal | Electronics Letters |
Publisher Date | 2017-07-24 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | BiCMOS Integrated Circuit BiCMOS Process Class-C Cross-coupled NMOSFET Pairs Class-C VCO Core Power Consumption Dc Current Reuse Direct Cross-coupled PMOSFET Dynamic Back Bias Circuit Figure of Merit Frequency 2.48 GHz Ge-Si Alloy High Dc-RF Conversion Efficiency Inductor Inductors And Transformer Insulated Gate Field Effect Transistors Low Loss Resonator Low Power Electronics Low-power Three-path Inductor Mixed Technology Integrated Circuit MOSFET Oscillator Phase Noise Power 0.24 MW Power Consumption Q Factor Resonator SiGe Size 0.18 Mum Three-path High Q-factor Inductor TSMC Standard Voltage 1.2 V Voltage Controlled Oscillator Voltage-controlled Oscillator |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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