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Content Provider | IET Digital Library |
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Author | Liang, W. Mukherjee, A. Sakalas, P. Pawlak, A. Schröter, M. |
Abstract | Using forward-biased base–collector voltage (V BC) in high-speed circuits is usually not attractive due to the performance degradation compared with biasing heterojunction bipolar transistors (HBTs) in the forward-active region. However, the use of ultra-low supply voltage in millimetre-wave circuits provides an interesting application scenario not only for demonstrating the potential of modern silicon germanium (SiGe) HBT technologies in implementing severely power-constrained wireless circuits on silicon but also for verifying the accuracy of compact models beyond standard characteristics typically measured by foundries. The results of a 96 GHz frequency tripler deliberately designed with a reduced supply voltage (0.5 V) in a 130 nm SiGe HBT technology are presented. With only 4.7 mW DC power consumption, this frequency tripler achieves a conversion loss of 3.8 dB, generating a 96 GHz output signal with only −10 dBm input signal at 32 GHz. The impact of transistor series resistances on the tripler performance is also analysed. |
Starting Page | 1308 |
Ending Page | 1310 |
Page Count | 3 |
ISSN | 00135194 |
Volume Number | 53 |
e-ISSN | 1350911X |
Issue Number | Issue 19, Sep (2017) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/53/19 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2017.2523 |
Journal | Electronics Letters |
Publisher Date | 2017-08-18 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Bipolar Transistor Conversion Loss Converter DC Power Consumption Forward-active Region Forward-biased Base-collector Voltage Frequency 32 GHz Frequency 96 GHz Frequency Multipliers Ge-Si Alloy Heterojunction Bipolar Transistors High-speed Circuit Loss 3.8 DB Low Power Electronics Low-power Frequency Tripler Millimetre Wave Bipolar Transistors Millimetre Wave Frequency Converter Millimetre-wave Circuit Performance Degradation Power 4.7 MW Power-constrained Wireless Circuit Semiconductor Material SiGe Silicon Germanium HBT Technology Size 130 Nm Solid State Microwave Circuit And Device Transistor Series Resistances Ultra-low Supply Voltage Voltage 0.5 V |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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