NDLI: Controlling fixed trap charge effect in FinFET using heterodielectric BOX

Content Provider	IET Digital Library
Author	Das, Rajashree Baishya, Srimanta
Abstract	This Letter presents an Si FinFET on heterodielectric BOX, where the effect of trap charges can be avoided. The investigation is based on a 3D simulation study. The BOX height also plays a significant role in the device characteristics. The effect of trap charges using homodielectric and heterodielectric BOX is verified by plotting the electron density across a 2D cross section in the middle of the channel. The authors further investigated the effect of temperatures, ranging from room temperature to higher temperatures. The FinFET, with heterodielectric BOX, shows no trap effect even when the temperature is varied. On the other hand, a visible temperature effect is observed in case of homodielectric BOX. Moreover, in case of homodielectric BOX, the ON–OFF performance metric, (Q) is affected in presence of trap charges; whereas no change is observed when a heterodielectric BOX is used. As such, it is found that the FinFET with heterodielectric BOX is more reliable and useful for current semiconductor industries.
Starting Page	239
Ending Page	241
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 4, Feb (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.3803
Journal	Electronics Letters
Publisher Date	2018-01-05
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	3D Simulation Study Dielectric Device Dielectric Material Electron Density Elemental Semiconductor FinFET Fixed Trap Charge Effect Control Heterodielectric BOX Homodielectric BOX Insulated Gate Field Effect Transistors MOSFET ON-OFF Performance Metric Other Dielectric Application And Device Reliability Semiconductor Device Reliability Semiconductor Industry Silicon Temperature 293 K to 298 K Visible Temperature Effect
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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