NDLI: GaN-based FinFET with double-channel AlGaN/GaN heterostructure

Content Provider	IET Digital Library
Author	Wang, Chong Wang, Xin Zheng, Xuefeng He, Qing Wu, Ji Tian, Ye Mao, Wei Ma, Xiaohua Hao, Yue
Abstract	GaN-based FinFET with double-channel AlGaN/GaN heterostructure is proposed. The current and transconductance characteristics of the device are simulated by Sentaurus software. The simulation results show that the GaN-based FinFET with double channel has higher saturation current and better linearity. The application of double-channel structure improves the saturation current and the control ability of the gate with the aid of triple gate. The combination of FinFET and double channel presents a novel structure for high-performance device. Furthermore, the enhancement-mode device can also be obtained by optimising the Fin width of the device.
Starting Page	313
Ending Page	315
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 5, Mar (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.3934
Journal	Electronics Letters
Publisher Date	2018-01-23
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Compound Double-channel Heterostructure Enhancement-mode Device FinFET Gallium Compound GaN-AlGaN-GaN III-V SemiConductor Insulated Gate Field Effect Transistors MOSFET Saturation Current Sentaurus Software Transconductance Characteristic Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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