NDLI: High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

Content Provider	IET Digital Library
Author	Takahashi, S. Tajiri, T. Watanabe, K. Ota, Y. Iwamoto, S. Arakawa, Y.
Abstract	The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.
Starting Page	305
Ending Page	307
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 5, Mar (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.4542
Journal	Electronics Letters
Publisher Date	2018-01-24
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	GaAs Gallium Arsenide High-quality Factor-nanocavities II-VI And III-V SemiConductor III-V SemiConductor In-plane Area InAs InAs Self-assembled Quantum Dots Indium Compound Micromanipulation Technique Nanofabrication Nanophotonic Device And Technology Nanophotonics Near-infrared Light Emission Optical Fabrication Optical Material Optical Property of II-VI And III-V SemiConductor Photonic Band Gap (condensed Matter) Photonic Crystal Q Factor Quantum Wells And Related Structure Self-assembled Quantum Dots Self-assembly Semiconductor Quantum Dots Semiconductor Superlattices Semiconductor-based Three-dimensional Photonic Crystal Nanocavity Surface Grinding
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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