NDLI: Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications

Content Provider	IET Digital Library
Author	Zhu, Tianhua Zhuo, Fang
Abstract	A high-current cascode gallium nitride (GaN) switch integrating a silicon-MOSFET (Si-MOSFET) and paralleled GaN depletion-mode high-electron-mobility transistors (DHEMT) is presented. The proposed switch can withstand twice or more the current than existing cascode GaN transistors by using only one Si-MOSFET and requiring a single gate driver, which evidently augments the power density, improves the system efficiency and reduces the cost. The causes and treatments of potential unbalanced current sharing among the paralleled GaN DHEMTs are further discussed and an optimised symmetric configuration and wire bonding of integral package are proposed. An effective solution is also introduced for avoiding an Si-MOSFET avalanche. The validity of proposed cascode GaN switch in the optimised package and the effectiveness of avalanche-suppressed method are both verified by simulations.
Starting Page	899
Ending Page	901
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 14, Jul (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/14
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.1273
Journal	Electronics Letters
Publisher Date	2018-06-05
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Avalanche-suppressed Method Cascode Transistors Cost Reduction DHEMT Integrated Cascode Switch Field Effect Transistor Switches Gallium Compound GaN High Electron Mobility Transistors High-current Application High-current Cascode Gallium Nitride Switch III-V SemiConductor Insulated Gate Field Effect Transistors Integral Package Lead Bonding Microassembly Technique MOSFET Optimised Symmetric Configuration Paralleled Depletion-mode High-electron-mobility Transistors Potential Unbalanced Current Sharing Power Density Product Packaging Relay And Switches Semiconductor Device Packaging Silicon-MOSFET Single Gate Driver Wide Band Gap SemiConductor Wire Bonding
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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