NDLI: Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors

Content Provider	IET Digital Library
Author	Giannakopoulos, S. He, Z. Darwazeh, I. Zirath, H.
Abstract	In this work, the authors present two transimpedance amplifier (TIA) circuits designed for fibre optical interconnect systems. They compare a common base (CB) topology with a common emitter (CE) shunt–shunt feedback topology in terms of frequency response, power consumption, noise, and input impedance. The two TIAs are designed on a 130 nm indium phosphide double heterojunction bipolar transistor technology from Teledyne Scientific Company (TSC) with an f t/fmax of 520 GHz/1.15 THz and are measured in the frequency and time domains. They exhibit a transimpedance gain of 42 dBΩ with a 133 GHz bandwidth, the highest bandwidth reported in the literature and power consumption of 32.3 mW for the CB and 25.5 mW for the CE. Eye diagram measurements were conducted up to 64 Gbps and input referred noise density was measured at 30.2 pA / Hz for the CB and 13.9 pA / Hz for the CE.
Starting Page	521
Ending Page	523
Page Count	3
ISSN	00135194
Volume Number	55
e-ISSN	1350911X
Issue Number	Issue 9, May (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/55/9
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.8135
Journal	Electronics Letters
Publisher Date	2019-03-14
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Bandwidth 133.0 GHz CB Topology Circuit Feedback Common Base Topology Common Emitter Shunt–shunt Feedback Topology Eye Diagram Measurement Fibre Lasers And Amplifier Fibre Optical Interconnect System Frequency 1.15 THz Frequency 520.0 GHz Frequency Domain Frequency Domain Analysis Frequency Response Heterojunction Bipolar Transistors III-V SemiConductor Indium Compound Indium Phosphide Double Heterojunction Bipolar Transistor Technology InP Input Impedance Mathematical Analysis Microwave Photonics Operational Amplifier Optical Fibre Amplifiers Optical Interconnections Power 25.5 MW Power 32.3 MW Power Consumption Size 130 Nm Solid State Microwave Circuit And Device Submillimetre Wave Amplifiers Submillimetre Wave Transistors TIA Design Time Domain Time Domain Analysis Transimpedance Amplifier Circuit Transimpedance Gain Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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