NDLI: 100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS

Content Provider	IEEE Xplore Digital Library
Author	Li, J.C. Elliott, K.R. Matthews, D.S. Hitko, D.A. Zehnder, D. Royter, Y. Patterson, P.R. Hussain, T. Jensen, J.F.
Copyright Year	1966
Abstract	Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth product of 40-130 GHz and low frequency gain > 45 dB . The use of InP DHBTs supports a > 6.9 V differential output swing and a slew rate > 4 times 10⁴V/mus to be achieved with as low as 40 mW dissipated power. A novel on-chip buffer circuit is used to facilitate the on-wafer characterization of these amplifiers. To the authors' knowledge, this is the first demonstration of a high performance IC building block in a heterogeneously integrated process technology.
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	2663
Ending Page	2670
Page Count	8
File Size	1902834
File Format	PDF
ISSN	00189200
Volume Number	44
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Differential amplifiers CMOS technology Indium phosphide Double heterojunction bipolar transistors Silicon CMOS process Heterojunction bipolar transistors CMOS integrated circuits Foundries Integrated circuit interconnections wafer-scale integration BiCMOS integrated circuits differential amplifier heterojunction bipolar transistor (HBT) Indium Phosphide (InP)
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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