NDLI: Influence of surface states on the reverse and noise properties of silicon power diodes

Content Provider	IET Digital Library
Author	Papež, Václav Hájek, Jiří Kojecký, Bedřich
Abstract	This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so called slow surface states (SSS). The SSS are caused by the presence of material process induced defects in the region of a p-n junction surface termination. SSS have fundamental impact on the reverse properties of diodes and their low frequency noise behaviour. The second cause is connected with so called volume structural defects (VSD). Their origin can be ‘genetic’ (e.g. the presence of imperfection inside a silicon crystal) or they can be induced during technological processing. These defects are not repairable and under the reverse bias they will form so called ‘hot spots’ that is, places with a local high current density. Rapid and operative measurements of the noise power can reveal latent instabilities of reverse characteristics invisible during a standard inspection process during the production.
Starting Page	213
Ending Page	220
Page Count	8
ISSN	1751858X
Volume Number	8
e-ISSN	17518598
Issue Number	Issue 3, May (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/8/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0219
Journal	IET Circuits, Devices & Systems
Publisher Date	2014-04-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Current Density Elemental Semiconductor Hot Spots Junction And Barrier Diode Latent Instabilities Local High Current Density Low Frequency Noise Behaviour Low Voltage DC Reverse Bias Material Process Noise Power Measurement Operative Measurement P-n Junction Surface Termination Power And Energy Measurement Power Diode Power Measurement Reverse Characteristic Degradation Reverse Property Semiconductor Diode Silicon Silicon Crystal Slow Surface State SSS Standard Inspection Process Technological Processing Volume Structural Defects VSD
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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