NDLI: Quantum effects of ultrathin OTFT and fabrication processes by atomic hydrogen annealing

Content Provider	IEEE Xplore Digital Library
Author	Horiuchi, T. Heya, A. Matsuo, N.
Copyright Year	2012
Description	Author affiliation: Department of Materials Science and Chemistry, University of Hyogo., University of Hyogo, 2167, Shosha, Himeji, 671-2280, Japan (Horiuchi, T.; Heya, A.; Matsuo, N.)
Abstract	We had fabricated the pentacene organic thin-film transistor (OTFT) with very thin film thickness and investigated the electrical characteristics. When the film thickness decreased, the on current of OTFT increased. It is considered that the quantum level is formed in the triangle potential. The mobility of OTFT is improved by using quantum effect. In order to fabricate uniformly ultrathin OTFT without pinhole, the size of pentacene island must be smaller. We tried to fabricate pentacene island using atomic hydrogen annealing (AHA). It is found that pentacene and resist can be etched by AHA without damage. It is expected that this method is a promising technique for fabrication of ultrathin OTFT with small island.
Starting Page	1
Ending Page	2
File Size	465154
Page Count	2
File Format	PDF
ISBN	9781467308373
e-ISBN	9781467308366
DOI	10.1109/IMFEDK.2012.6218622
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-09
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pentacene atomic hydrogen annealing pentacene Films OTFT Resists Organic thin film transistors Etching Substrates quantum effect
Content Type	Text
Resource Type	Article

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Electrical and structural properties of organic thin-film transistor using very thin pentacene film

Effects of the polymeric dielectric on OTFT performances

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