NDLI: In situ grown AlN/AlGaN/GaN heterostructure field-effect transistor

Content Provider	IEEE Xplore Digital Library
Author	Zi-Hao Wang Ping-Chuan Chang Kai-Hsuan Lee Shoou-Jinn Chang
Copyright Year	2012
Description	Author affiliation: Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan (Zi-Hao Wang; Kai-Hsuan Lee; Shoou-Jinn Chang) \|\| Department of Electro-Optical Engineering, Kun Shan University, Yong-Kang Dist., Tainan, Taiwan (Ping-Chuan Chang)
Abstract	In situ grown AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructure field-effect transistor (HFET) is promising for high power applications due to the reduced gate leakage current together with the successful surface passivation. In this study, we present a novel AlGaN/GaN MIS-HFET using in situ AlN as a gate insulator. The AlN is formed subsequently after the epitaxial growth in the same reactor without any exposure in the air. This “earlier” passivation by in situ AlN protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics. The unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 14.5 and 24.9 GHz, respectively. The fabricated AlN/AlGaN/GaN MIS-HFET at 2.4 GHz delivers 2.3 W/mm output power density and 21.3% peak power added efficiency. It demonstrates a great potential to the next-generation power transistor.
Starting Page	1
Ending Page	2
File Size	193137
Page Count	2
File Format	PDF
ISBN	9781467308373
e-ISBN	9781467308366
DOI	10.1109/IMFEDK.2012.6218604
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-09
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	heterostructure field-effect transistor GaN HEMTs Logic gates Gallium nitride MODFETs Aluminum gallium nitride in situ Passivation AlGaN
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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