NDLI: Numerical simulation of transport properties in InAs/Si heterojunction nanowire tunneling field effect transistors

Content Provider	IEEE Xplore Digital Library
Author	Miyoshi, Y. Ogawa, M. Souma, S. Nakamura, H.
Copyright Year	2012
Description	Author affiliation: Tokyo Reaearch Lab., IBM-Japan, 1623-14 Shimotsuruma, Yamato, Kanagawa, 242-8502, Japan (Nakamura, H.) \|\| Department of Electrical and Electronic Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan (Miyoshi, Y.; Ogawa, M.; Souma, S.)
Abstract	Electronic transport in InAs/Si heterojunction nanowire (NW) band-to-band tunneling field-effect transistors (TFETs) is studied numerically using the non-equilibrium Green's function formalism based on the $sp^{3}$ $s^{∗}$ $d^{5}$ tight-binding Hamiltonian. Our analyses have shown that TFETs based on the InAs/Si heterojunction NW have superior properties compared with those based on the Si and InAs homojunction NWs in obtaining the higher on-current, lower leakage current as well as the steeper subthreshold swing. The physical origin behind such superiority can be successfully understood by analyzing the complex band structures and the local densities of states.
Starting Page	1
Ending Page	2
File Size	648939
Page Count	2
File Format	PDF
ISBN	9781467308373
e-ISBN	9781467308366
DOI	10.1109/IMFEDK.2012.6218605
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-09
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	TFETs non-equilibrium Green's function method heterojunction Tunneling Heterojunctions Logic gates tight-binding method Silicon Leakage current Green's function methods MOSFETs nanowire
Content Type	Text
Resource Type	Article

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