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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Luther-King, N. Narayanan, E.M.S. Coulbeck, L. Crane, A. Dudley, R. |
| Copyright Year | 2010 |
| Description | Author affiliation: Dynex Semiconductors, Lincoln, UK (Coulbeck, L.) || Electrical Machines and Drives Research Group, The University of Sheffield, Mappin Street, S1 3JD (Luther-King, N.; Narayanan, E.M.S.) || ConverTeam Ltd, Rugby, UK (Crane, A.) || Dudley Associates, Lutterworth, UK (Dudley, R.) |
| Abstract | Trench gate MOS controlled devices are more desirable in power modules because their reduced Vce(sat) enables increased output power density. However with increased drift region thickness with voltage rating, there is significant increase in conduction loss in Trench gate IGBT (T-IGBT) due to low plasma density from inherent pnp transistor action. On the other hand a well-designed trench gate MOS-controlled thyristor such as the Trench Cluster Insulated Gate Bipolar Transistor (T-CIGBT) is a drop in solution, which can provide thyristor-like on-state loss without compromising ease of control, turnoff loss and SOA. The T-CIGBT device technology employs controlled thyristor to lower on-state and a unique ‘self-clamping’ of the cathode cell potential to control the saturation current density. The comparison of T-IGBT and T-CIGBT 3.3kV/800A module simulation results in this paper show that T-CIGBT can reduce hard switching total losses and increase the power density of existing IGBT module footprints. |
| Starting Page | 545 |
| Ending Page | 549 |
| File Size | 405667 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424449866 |
| DOI | 10.1109/SPEEDAM.2010.5542035 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-14 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Insulated gate bipolar transistors Thyristors Cluster insulated gate bipolar transistor (CIGBT) Multichip modules trench-clustered insulated gate bipolar transistor (T-CIGBT) and T-IGBT MOSFETs Uninterruptible power systems Controlled thyristor Space technology Voltage Anodes Power generation Cathodes |
| Content Type | Text |
| Resource Type | Article |
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