NDLI: New applications of internal photoemission to determine basic MOS system parameters

Content Provider	IEEE Xplore Digital Library
Author	Przewlocki, H.M.
Copyright Year	2006
Description	Author affiliation: Inst. of Electron Technol., Warsaw (Przewlocki, H.M.)
Abstract	A new approach to the photoelectric phenomena taking place in the MOS system at low electric fields in the dielectric has been developed and its basic features will be presented shortly. It allows calculation of some of the MOS structure characteristics and the good agreement between these calculated characteristics and the ones taken experimentally strongly supports the validity of the approach. Based on this new approach highly sensitive photoelectric measurement methods have been worked out. Principles underlying some of these methods, as well as experimental procedures applied will be presented. In particular, the importance will be underscored of the photoelectric measurement method of the effective contact potential difference (ECPD or $phi_{MS})$ between the gate and the substrate of the MOS structure. This method is the most sensitive and most accurate of the existing methods of this parameter determination. In addition to their sensitivity and accuracy, photoelectric measurement methods allow determination of the local values of some of the MOS structure electrical parameters in the regions which are small in comparison with gate dimensions. This is done by illuminating small fragments of the gate area with a focused beam of UV radiation and measuring the resulting photocurrents in the external circuit. Scanning the gate area with such a UV radiation beam of small diameter allows determination of distributions of some of the electrical parameters over the gate area. In particular, the $phi_{MS}(x,y)$ distributions have been determined over gate areas of Al $-SiO_{2}-Si$ and poly-Si - $SiO_{2}$ - Si structures. The differences between these distributions will be discussed. Using similar procedures, distributions of the barrier height local values at the gate-dielectric interface $E_{BG}(x,y)$ and at the semiconductor-dielectric interface $E_{BS}(x,y)$ can be determined. Such distributions will be demonstrated and compared with the $phi_{MS}(x,y)$ distribution determined for the same structure. Principles underlying possible further applications of the photoelectric measurement methods will also be discussed.
Starting Page	163
Ending Page	168
File Size	123550
Page Count	6
File Format	PDF
ISBN	9781424406036
DOI	10.1109/IWNC.2006.4570989
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-30
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	IWNC Dielectric substrates MOS capacitors Electric variables measurement Voltage Dielectric measurements Particle measurements Photoelectricity Channel bank filters Photoconductivity Electrons Nano CMOS
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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