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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cheng, C.W. Li, C.K. |
| Copyright Year | 1991 |
| Description | Author affiliation: Dept. of Electron. Eng., Hong Kong Polytech., Hunghom, Hong Kong (Cheng, C.W.; Li, C.K.) |
| Abstract | The authors present a tree-based model approximation (TBMA) MOSFET table model. With the method, the function domain of interest is partitioned recursively. Compared with an even partition strategy in a conventional table look-up, the partition size of a region inside the domain is large when the function is less nonlinear in that region and it is smaller if the function is more nonlinear. To reduce the dimension of the table, the gate-offset-voltage concept is used to shrink the three dimensional MOSFET model to a two dimensional model, maintaining the overall accuracy within a few percent. If smaller error is required, a TBMA correction table can be imposed to reduce the evaluation error to a specified value. Also, a new algorithm for constructing continuity partitions in the TBMA table is proposed.<> |
| Starting Page | 200 |
| Ending Page | 203 |
| File Size | 283668 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/CICCAS.1991.184318 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-06-16 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Computational modeling Circuit simulation Linear approximation Voltage Very large scale integration MOSFET circuits Computer errors Error correction Partitioning algorithms Computational efficiency |
| Content Type | Text |
| Resource Type | Article |
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