NDLI: A new transition density calculation method for XOR gate

Content Provider	IEEE Xplore Digital Library
Author	Xuecheng Li Lunyao Wang Yinshui Xia
Copyright Year	2013
Description	Author affiliation: Fac. of Inf. Sci. & Eng., Ningbo Univ., Ningbo, China (Xuecheng Li; Lunyao Wang; Yinshui Xia)
Abstract	With remarkable growth of the integration density in IC design, power is being given comparable weight to speed and area. The transition density is a very important parameter for power estimation in power optimization. Previous researches on the transition density for random signals are based on the probability or another parameter named non-transition density, which usually lead to the larger experimental errors. In this paper, a novel method for the signal transition density calculation is presented for 2-XOR gate. Experimental results show that the proposed method is more accurate than the published methods. Comparing to the EDA tools, the average experimental error of our method is less than 1.356%.
Sponsorship	IEEE Taipei Sect. AP Chapt.
Starting Page	1
Ending Page	4
File Size	334968
Page Count	4
File Format	PDF
ISBN	9781479911110
DOI	10.1109/ICASID.2013.6825295
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-25
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transition density Power optimization Estimation Logic gates CMOS integrated circuits Low power Mathematical model Optimization Equations Clocks
Content Type	Text
Resource Type	Article

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