NDLI: A high precision CMOS band-gap reference with exponential curvature-compensation

Content Provider	IEEE Xplore Digital Library
Author	Yongsheng Yin Dewu Li Honghui Deng
Copyright Year	2013
Description	Author affiliation: Inst. of VLSI Design, Hefei Univ. of Technol., Hefei, China (Yongsheng Yin; Dewu Li; Honghui Deng)
Abstract	An exponential curvature compensation technique for the high precision band-gap reference (BGR) is presented in this paper, in order to reduce the temperature coefficient (TC) of the traditional band-gap reference, the circuit exploits the temperature characteristics of the current gain ß of BJTs, and generates the current which has non-linear relationship with the temperature to compensate for the higher-order term of the BGR. The compensation circuit adopts a different bipolar current mirror, which can reduce the current error greatly, and the use of native nmos instead of bipolar makes the BGR worked normally under a relatively low supply voltage and the MOST mirrored current can be more accurate. The whole BGR circuits are simulated by Spectre based on chartered 0.18μm 1P5M 1.8V CMOS technology. The simulation shows the temperature coefficient of the output voltage reaches 1.85ppm/K over the military temperature range of -40°C to +125°C, the Power Supply Rejection Ratio (PSRR) of the reference voltage achieves 58.8dB at low frequency(f=0.1Hz), the settling time is 370 ns and the band-gap reference can work normally in all process corners.
Sponsorship	IEEE Taipei Sect. AP Chapt.
Starting Page	1
Ending Page	5
File Size	538029
Page Count	5
File Format	PDF
ISBN	9781479911110
DOI	10.1109/ICASID.2013.6825293
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-25
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature distribution Temperature coefficient Photonic band gap Power supplies Exponential curvature compensation Settling time CMOS integrated circuits Mirrors Band-gap reference MOS devices
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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