NDLI: Process variation tolerant SRAM cell design using additive model considering NBTI effect

Content Provider	IEEE Xplore Digital Library
Author	Khosropour, A. Kashani-Gharavi, S. Asadpour, R. Afzali-Kusha, A.
Copyright Year	2012
Description	Author affiliation: Department of Electrical and Computer Engineering, University of Tehran, Iran (Khosropour, A.; Kashani-Gharavi, S.; Asadpour, R.; Afzali-Kusha, A.)
Abstract	In this paper, we propose a statistical methodology for the design of process variation tolerant yet low-power 6T SRAM cells. In addition to process variations, Negative Bias Temperature Instability (NBTI) has been included in the design methodology such that the time dependence of the failure probability is taken into account. To increase the modeling accuracy of the statistical distributions of different SRAM reliability metrics such as static noise margin (SNM) and Read Current, a modeling scheme based on nonlinear regression is suggested. The design technique, which minimizes the failure probabilities due to the process variations, considers the widths and lengths of the six transistors of the cell as design parameters. The sizes of the transistors are selected such that the area constraint is not violated. Also, to include the static power consumption of the SRAM block in the design methodology, we introduce a method for estimating the SRAM block leakage distribution. To show the efficacy of the technique, the results of applying this methodology for a 45 nm CMOS technology are presented.
Starting Page	46
Ending Page	53
File Size	720254
Page Count	8
File Format	PDF
ISBN	9781467326872
e-ISBN	9781467326889
DOI	10.1109/ACQED.2012.6320474
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-10
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Measurement statistical design Static Random Access Memory (SRAM) Random access memory process variation Negative Bias Temperature Instability (NBTI) Threshold voltage Random variables Transistors Reliability
Content Type	Text
Resource Type	Article

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