NDLI: Influence of electric field penetration on uniformly doping GaAs photocathode photoelectric emission properties

Content Provider	IEEE Xplore Digital Library
Author	Ling Ren Benkang Chang Honggang Wang Feng Shi Hui Guo
Copyright Year	2012
Description	Author affiliation: Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, China (Ling Ren; Benkang Chang; Honggang Wang; Feng Shi) \|\| Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an, China (Hui Guo)
Abstract	In order to explore the changes of photoelectric emission properties of GaAs material employed in the third generation low light level (LLL) image intensifiers, the influence of electric field penetration on photoelectric emission properties of uniformly doping GaAs photocathode is studied. Based on the establishment of electric field penetration model for uniformly doping GaAs photocathode, the photoelectric trajectories in GaAs photocathode have been calculated in different penetration voltages. The results show that electric field penetration is helpful for enhancing the movement of photoelectrons excitated by the long-wave radiation toward the band bending region (BBR). With increase of electric field penetration, the diffuse circle of photoelectrons reaching the BBR has no obvious difference, and the resolution of GaAs photocathode is improved. The fitted curves of the location distribution of photoelectrons can be expressed by Gaussian formula. The research will be beneficial to promote the development of the LLL night vision technology.
Starting Page	1
Ending Page	4
File Size	545927
Page Count	4
File Format	PDF
ISBN	9781467325134
e-ISBN	9781467325165
DOI	10.1109/PGC.2012.6457987
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-13
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface waves photoelectric emission Gallium arsenide electric field penetration Doping Image intensifiers uniformly doping Semiconductor process modeling Electric fields GaAs Cathodes
Content Type	Text
Resource Type	Article

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