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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wada, K. Fujii, T. |
| Copyright Year | 2015 |
| Description | Author affiliation: Tokyo Metropolitan Univ., Hachioji, Japan (Wada, K.; Fujii, T.) |
| Abstract | Developments of a high-frequency switching PWM inverter have been presented. In high-switching frequency PWM inverter, a dead time for preventing a short circuit of the inverter circuit is a one of the most critical issues. Especially, it will be affected to inverter operations, such as current distortions, output voltage reduction, and switching frequency limitations. In the case of using the Si-MOSFET, the dead time is normally set to at least 500-ns, and it is fixed value in each circuit. Therefore, the upper limitation of the switching frequency is limited by the dead time. This paper proposes a 500-kHz switching PWM inverter without dead time using Si-MOSFET, and it can be realized for setting low-voltage gate-drive operations. Moreover, it will present the experimental results for a single-phase PWM inverter, when the switching frequency is set to 500 kHz and DC voltage is set to 300 V. |
| Starting Page | 2175 |
| Ending Page | 2179 |
| File Size | 303542 |
| Page Count | 5 |
| File Format | |
| ISBN | 9788957082546 |
| ISSN | 21506086 |
| DOI | 10.1109/ICPE.2015.7168078 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-06-01 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Korean Institute of Power Electronics |
| Subject Keyword | MOSFET Switching frequency Switches PWM inverter Dead time Pulse width modulation Logic gates Inverters MOS-FET High frequency switching Switching circuits |
| Content Type | Text |
| Resource Type | Article |
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