NDLI: EMI modeling and experiment of a GaN based LLC half-bridge converter

Content Provider	IEEE Xplore Digital Library
Author	Mofan Tian Yuan Hao Kangping Wang Yang Xuan Lang Huang Jingjing Sun Xu Yang
Copyright Year	2015
Description	Author affiliation: State Key Lab. of Electr. Insulation & Power Equip., Xi'an Jiaotong Univ., Xi'an, China (Mofan Tian; Yuan Hao; Kangping Wang; Yang Xuan; Lang Huang; Jingjing Sun; Xu Yang)
Abstract	This paper focuses on the electromagnetic interference (EMI) research and analysis of the MHz switching frequency GaN MOSFET based on the LLC resonant DC-DC converter. In this paper, first, the CM coupling paths are studied to get simplified models. Then the impact of the parasitic capacitors (both the capacitors to the ground and the capacitors in the devices) on the CM current are analyzed. Finally the high frequency model is derived from the work above. Moreover this paper makes the comparison between normal Si MOSFET and GaN-based MOSFET behavior in EMI. The modeling result proves that GaN MOSFET has a worse behavior on EMI test. An experiment layout which is aimed at minimizing the irrelevant factors is designed and the experiment result proves the accuracy of the modeling.
Starting Page	1961
Ending Page	1966
File Size	648762
Page Count	6
File Format	PDF
ISBN	9788957082546
ISSN	21506086
DOI	10.1109/ICPE.2015.7168047
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-01
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Korean Institute of Power Electronics
Subject Keyword	Couplings layout EMI MOSFET DC-DC converter Capacitors Electromagnetic interference Noise Resonant frequency GaN Mosfet Gallium nitride
Content Type	Text
Resource Type	Article

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