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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Amma, R. Fujita, H. |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan (Amma, R.; Fujita, H.) |
| Abstract | This paper discusses analysis and reduction of power losses in PV converter systems using conventional Si-IGBTs as well as SiC-MOSFETs. The PV converter system discussed in this paper consists of a boost converter and two half-bridge PWM inverters, considering grid connection to three-phase three-wire low-voltage power systems in Japan. Power losses in Si-IGBTs and SiC-MOSFETs are measured and theoretically discussed from experimental result in a buck converter benchmark. The power losses in PV converters using Si-IGBTs and SiC-MOSFETs are also measured and separated into the components in each part. As a result, it is clarified that the dominant power loss occurs in the two half-bridge inverters, and their switching power losses are larger than the on-state losses. Moreover, application of SiC-MOSFETs to both boost converter and half-bridge inverters makes it possible to improve the overall power conversion efficiency from 93.5% to 95.5% in the Euro-eta definition. |
| Starting Page | 2027 |
| Ending Page | 2033 |
| File Size | 1730539 |
| Page Count | 7 |
| File Format | |
| ISBN | 9781479927050 |
| ISSN | 21506086 |
| DOI | 10.1109/IPEC.2014.6869866 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-05-18 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Insulated gate bipolar transistors Resistance PV converters low-voltage three-phase three-wire systems Switches switching power losses Loss measurement Grid-connected converters |
| Content Type | Text |
| Resource Type | Article |
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