NDLI: Comparative study of enhancement-mode gallium nitride FETs and silicon MOSFETs for power electronic applications

Content Provider	IEEE Xplore Digital Library
Author	Pal, A. Narayanan, G.
Copyright Year	2014
Description	Author affiliation: Dept. of Electr. Eng., Indian Inst. of Sci., Bangalore, India (Pal, A.; Narayanan, G.)
Abstract	Gallium nitride (GaN) based high-electron-mobility transistor (HEMT) is becoming popular as fast switching devices for power electronic applications. This paper presents a comparative study of the critical parameters such as on-state resistance, reverse conduction drop, leakage current, maximum junction temperature, threshold voltage, gate charge requirement and device capacitances of commercially available enhancement-mode GaN (e-GaN) devices with those of Si MOSFET devices of the same voltage and current ratings. This paper also calculates the switching transition times of the e-GaN HEMTs based on their gate-charge characteristics. Further, the switching losses are also evaluated. These switching transition times and switching energy losses are also compared for the two types of devices. The e-GaN devices show excellent reduction in switching times and switching losses over the Si MOSFET devices, indicating their suitability for high-frequency power conversion. The e-GaN devices also reduce the on-state loss in most cases. However, the reverse conduction drop and leakage currents are higher with eGaN devices than with Si devices.
Starting Page	1
Ending Page	6
File Size	766428
Page Count	6
File Format	PDF
ISBN	9781479960453
e-ISBN	9781479960460
DOI	10.1109/IICPE.2014.7115858
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-08
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	power switching device MOSFET on-state drop Field-effect transistor Switches power conversion switching loss silicon MOSFET switching transition time Gallium nitride high-electron-mobility transistor power loss Switching loss Logic gates Silicon gallium nitride
Content Type	Text
Resource Type	Article

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