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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sengiku, M. Oda, Y. Jiang, W. Yatsui, K. Ogura, Y. Kato, K. Shinbo, K. Kaneko, F. |
| Copyright Year | 2000 |
| Description | Author affiliation: Department of Electrical and Electronics Engineering Niigata University, Ikarashi 2-8050, 950-2181, Japan (Ogura, Y.; Kato, K.; Shinbo, K.; Kaneko, F.) || Extreme Energy-density Research Institute, Nagaoka University of Technology, Niigata 940-2188, Japan (Sengiku, M.; Oda, Y.; Jiang, W.; Yatsui, K.) |
| Abstract | SrAl2O4 activated with Eu phosphors has been known to exhibit highly bright and long-lasting phosphorescence without radioactive materials. In this paper, SrAl2O4:Eu thin films have been successfully deposited on Si(100) or graphite substrate by using an intense pulsed ion-beam evaporation technique. The results of X-ray diffraction and photoluminescence suggest that SrAl2O4:Eu thin films which has a polycrystalline structure can be produced in vacuum, without substrate heating and annealing. The composition and morphology of the films have been analyzed by Rutherford backscattering and scanning electron microscope. From RBS analyze, we have obtained good stoichiometry between the target and the films prepared. |
| Starting Page | 629 |
| Ending Page | 632 |
| File Size | 524451 |
| Page Count | 4 |
| File Format | |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-06-20 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Nagaoka University of Technology |
| Subject Keyword | photoluminescence Films Blades Fitting Vacuum technology SrAl2O4:Eu Substrates intense pulsed ion-beam evaporation long phosphorescence thin films |
| Content Type | Text |
| Resource Type | Article |
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