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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hang Guo Daqun Bao Yi Zhang |
| Copyright Year | 2008 |
| Description | Author affiliation: Pen-Tung Sah MEMS Res. Center, Xiamen Univ., Fujian (Hang Guo; Daqun Bao; Yi Zhang) |
| Abstract | This paper presents the growth and characterization of PZT ferroelectric thin films by using the sol-gel technology. In this paper, we study the influences of annealing temperatures, different film thickness and different substrates, including titanium and platinum layers on silicon substrate, on the ferroelectric performance of PZT thin films by analyzing the polarization hysteresis. The polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that the remnant polarization of PZT thin films are higher with the increase of thickness, and the remnant polarization are 8.6 $muC/cm^{2}$ and 11.0 $muC/cm^{2}$ on Ti electrode and Pt/Ti electrode at the annealing temperature of 650degC, respectively. Thus the PZT thin films prepared by using the sol-gel method can be used for developing PZT-based ferroelectric MEMS devices. |
| Starting Page | 2130 |
| Ending Page | 2133 |
| File Size | 2927398 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424424283 |
| DOI | 10.1109/ULTSYM.2008.0527 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-11-02 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Ferroelectric materials Transistors Polarization Thin film circuits Annealing Temperature Substrates Hysteresis Electrodes Ferroelectric films ferroelectric PZT thin films Sol-gel method |
| Content Type | Text |
| Resource Type | Article |
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