NDLI: An avalanche rugged NPT trench IGBT used in single-ended quasi resonant topology for induction heating appliance

Content Provider	IEEE Xplore Digital Library
Author	Kyu Hyun Lee Kwang-Hoon Oh Young-Chul Kim Chong Man Yun
Copyright Year	2005
Description	Author affiliation: Fairchild Semicond., Kyunggi (Kyu Hyun Lee; Kwang-Hoon Oh; Young-Chul Kim; Chong Man Yun)
Abstract	A 1000 V NPT (non-punch through) trench IGBT is developed for the single-ended quasi resonant circuit. Optimizing trench cell design and NPT technology, high avalanche ruggedness as well as the outstanding static and dynamic performances is obtained. Comparing the PT trench IGBT having the identical design and processes, it is also empirically shown that the developed NPT trench IGBT has significantly improved avalanche capability under the various test conditions for the IH application using the quasi resonant topology and reduces the instantaneous device failures resulting from inadequate avalanche ruggedness under abnormal operating condition
File Size	2861188
File Format	PDF
ISBN	9075815093
DOI	10.1109/EPE.2005.219739
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-11
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	EPE Association
Subject Keyword	Insulated gate bipolar transistors Process design Trench Non-punch through (NPT) TV RLC circuits Topology Home appliances IGBT lnduction-Heating Switching loss Voltage Single-Ended Quasi Resonant Topology Avalanche Ruggedness Resonance Testing
Content Type	Text
Resource Type	Article

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An avalanche rugged NPT trench IGBT used in single-ended quasi resonant topology for induction heating appliance