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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Schulze, H.-J. Niedernostheide, F.-J. Kellner-Wedehausen, U. Scheider, C. |
| Copyright Year | 2005 |
| Description | Author affiliation: Infineon Technol. AG, Munich (Schulze, H.-J.; Niedernostheide, F.-J.) |
| Abstract | Diodes and asymmetric thyristors with a blocking capability of 13 kV can be used with great benefit in various applications such as high-voltage direct current transmission, flexible alternate current transmission, or the wide field of pulsed-power applications. We have fabricated first test diodes and direct light-triggered asymmetric thyristors designed for such applications. Characteristic design features of both devices are described and their typical static and dynamical features are presented. In the 13-kV diodes, a recently proposed buried field stop layer was implemented. First test measurements confirmed the predicted improvement of the reverse recovery behavior of a diode provided with such a buried field stop layer. The main challenge in designing the asymmetric thyristor pertained to the integration of a direct light-triggering function, and overvoltage protection |
| File Size | 2424347 |
| File Format | |
| ISBN | 9075815093 |
| DOI | 10.1109/EPE.2005.219296 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-09-11 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | EPE Association |
| Subject Keyword | Protons Thyristors Annealing HVDC transmission Aluminum Thyristor Doping profiles Bipolar Device Diodes LTT (Light Triggering Thyristor) HVDC Fabrication Voltage High Power Discrete Device Testing |
| Content Type | Text |
| Resource Type | Article |
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