NDLI: Pure-play GaN foundry technology for 50V applications

Content Provider	IEEE Xplore Digital Library
Author	Che-Kai Lin Fan-Hsiu Huang Jhih-Han Du Sheng-Wen Peng Tung-Yao Chou Wei-Chou Wang Jya-Shian Wu Kuo, R. Huang, C. Wohlmuth, W. Chih-Wen Huang Takatani, S. Wen-Kai Wang
Copyright Year	2015
Description	Author affiliation: WIN Semicond. Corp., Taoyuan, Taiwan (Che-Kai Lin; Fan-Hsiu Huang; Jhih-Han Du; Sheng-Wen Peng; Tung-Yao Chou; Wei-Chou Wang; Jya-Shian Wu; Kuo, R.; Huang, C.; Wohlmuth, W.; Chih-Wen Huang; Takatani, S.; Wen-Kai Wang)
Abstract	In this paper, we present a 50V GaN HEMT technology portfolio and focuses on layout optimization, fabrication, and device modeling. A 100W PA has been demonstrated with custom heat-sink and second harmonic tuning. The newly developed 50V technology enables high power amplifier, pulsed radar, CATV, and LTE applications utilizing supply voltages of 50V for L- to C- band operational frequencies. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests.
Starting Page	1
Ending Page	4
File Size	2638567
Page Count	4
File Format	PDF
e-ISBN	9781479974733
DOI	10.1109/COMCAS.2015.7360495
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-02
Publisher Place	Israel
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SiC AlGaN/GaN Temperature measurement field-plate Power measurement Current measurement Logic gates HEMTs pulse Transmission line measurements Foundries 50V base station harmonic
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Pure Play GaN Foundry 0.25µm HEMT Technology for RF Applications

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements

Improved current collapse in AlGaN/GaN HEMTs with 3-dimensional field plate structure

Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements

Electrothermal and large-signal modeling of switchmode AlGaN/GaN HEMTs

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Pure-play GaN foundry technology for 50V applications

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Pure Play GaN Foundry 0.25µm HEMT Technology for RF Applications

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements

Improved current collapse in AlGaN/GaN HEMTs with 3-dimensional field plate structure

Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements

Electrothermal and large-signal modeling of switchmode AlGaN/GaN HEMTs

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Pure-play GaN foundry technology for 50V applications