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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Khalid, N. Singh, J. Le, H.P. Shah, K. Devlin, J. Sauli, Z. |
| Copyright Year | 2010 |
| Abstract | This paper presents the design and optimisation of high quality (Q) factor inductors using Micro/Nano Electro-Mechanical Systems (NEMS/MEMS) technology for 10GHz to 20GHz frequency band. Three inductors have been designed with rectangular, circular and symmetric topologies. Comparison has been made amongst the three to determine the best Q-factor. Inductors are designed on Silicon-on-Sapphire (SOS) because of its advantages including high resistivity and low parasitic capacitance. The effects of various parameters such as outer diameter (OD), the width of metal traces (W), the thickness of the metal (T) and the air gap (AG) on the Q-factor and inductance performances are thoroughly investigated. Results indicate that the symmetric inductor has highest Q-factor with peak Q of 192 at 12GHz for a 1.13nH. |
| Starting Page | 319 |
| Ending Page | 324 |
| File Size | 443110 |
| Page Count | 6 |
| File Format | |
| ISBN | 9780769539782 |
| e-ISBN | 9781424460267 |
| DOI | 10.1109/DELTA.2010.45 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-01-13 |
| Publisher Place | Vietnam |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Q factor Conductivity High Q inductor Topology Silicon-on-sapphire Inductors Design optimization Micromechanical devices Wireless sensor networks Nanoelectromechanical systems Micro/Nano Electro-Mechanical Systems (MEMS/NEMS) Frequency Parasitic capacitance |
| Content Type | Text |
| Resource Type | Article |
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