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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Formicone, G. Custer, J. |
| Copyright Year | 2015 |
| Description | Author affiliation: Integra Technol. Inc., El Segundo, CA, USA (Formicone, G.; Custer, J.) |
| Abstract | The relationship between Fe concentration in the buffer layer and breakdown voltage of an AlGaN/GaN on SiC HEMT transistor has been investigated to achieve operation of the device in a UHF power amplifier operated at a bias of 100V or higher. A 15mm transistor has been tested in a power amplifier at the frequency of 430MHz with a 100μs pulse and 10% duty factor, operated at 75V, 100V, 125V and 150V bias. At 100V bias, the device achieves 250W output power and 78% drain efficiency with 27dB gain almost independently of Fe content; at 125V bias, only the devices with Fe content above 1e18 $cm^{-3}$ achieve a saturated power in excess of 350W with 75% drain efficiency and 27dB gain. RF burn-in tests indicate very stable operation. To the authors' knowledge, this is the first time that UHF pulsed radar amplifier operation has been reported at voltages above 100V with GaN technology. |
| Starting Page | 192 |
| Ending Page | 195 |
| File Size | 372466 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870408 |
| DOI | 10.1109/EuMIC.2015.7345101 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-09-07 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EuMA |
| Subject Keyword | Decision support systems Microwave integrated circuits UHF breakdown voltage Europe 125V bias Fe doping buffer layer Microwave circuits amplifier |
| Content Type | Text |
| Resource Type | Article |
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