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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | van Raay, F. Quay, R. Aja, B. Moschetti, G. Seelmann-Eggebert, M. Schlechtweg, M. Ambacher, O. |
| Copyright Year | 2015 |
| Description | Author affiliation: Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany (van Raay, F.; Quay, R.; Aja, B.; Moschetti, G.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.) |
| Abstract | Modern communication and radar systems show an increasing demand for robust ultra-broadband amplifiers for low-noise applications. A set of three different 0.5 GHz to 20 GHz MMIC LNAs using a GaN HEMT technology with a gate length of 0.25 μm was designed and fabricated, each with a noise figure between 3 dB and 7 dB over frequency. Two designs with four and five FET cells feature approx. 10 dB and 11 dB broadband gain, while a third MMIC with a chain connection of both figures more than 20 dB of gain. A distributed active drain bias circuit substitutes large area or off-chip inductor structures and enables a full-MMIC chain connection of both TWA stages. |
| Starting Page | 156 |
| Ending Page | 159 |
| File Size | 656729 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870408 |
| DOI | 10.1109/EuMIC.2015.7345092 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-09-07 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EuMA |
| Subject Keyword | AlGaN/GaN HEMTs Power transmission lines Low-Noise Amplifiers Active Biasing Circuits Logic gates HEMTs Capacitance Broadband communication Gain Distributed Amplifiers |
| Content Type | Text |
| Resource Type | Article |
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