NDLI: Design of power amplifier MMICs based on GaN HEMTs at 110GHz

Content Provider	IEEE Xplore Digital Library
Author	Yanfei, Hou Weihua, Yu Xiaobin, Luo Yuanjie, Lv Shaobo, Dun Zhihong, Feng
Copyright Year	2015
Description	Author affiliation: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, 050051, Shijiazhuang, China (Yuanjie, Lv; Shaobo, Dun; Zhihong, Feng) \|\| Beijing Key Laboratory of Millimeter-wave and Terahertz Technology, Beijing Institute of Technology, 100081, Beijing, China (Yanfei, Hou; Weihua, Yu; Xiaobin, Luo)
Abstract	This paper presents a power amplifier (PA) Monolithic Microwave Integrated Circuit (MMIC) based on GaN High Electron Mobility Transistor (HEMT) at 110 GHz. A parallel cascade class AB power amplifier is used in order to increase linearity and efficiency. This single-ended three-stage power amplifier provides 19.6dBm output power (Pout) with large signal gain of 7.6dB and power added efficiency (PAE) of 5.7% at 110GHz. The proposed power amplifier exhibits output power of 18.7dBm at 1dB compression point (P).
Starting Page	1
Ending Page	3
File Size	536438
Page Count	3
File Format	PDF
ISBN	9781479987658
e-ISBN	9781479987672
DOI	10.1109/APMC.2015.7413154
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-12-06
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power amplifiers Power generation Integrated circuits HEMTs Decision support systems Impedance Microwave amplifiers
Content Type	Text
Resource Type	Article

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