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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rudolph, M. Escotte, L. Doerner, R. |
| Copyright Year | 2014 |
| Description | Author affiliation: LAAS, Toulouse, France (Escotte, L.) || Leibniz Inst. fur Hochstfrequenztech., Ferdinand Braun Inst., France (Doerner, R.) || Dept. of RF & Microwave Technol., Brandenburg Univ. of Technol., Brandenburg, Germany (Rudolph, M.) |
| Abstract | This paper investigates the capability of Pospieszalski-type and Pucel-type noise model implementations to predict the truly nonlinear noise behavior of GaN HEMT devices. The bias-dependence of the noise model parameters is introduced for both models. It is then addressed how the difference in model topology could yield different noise performance in the nonlinear regime. Also dispersion is taken into account. Comparison of simulation results with nonlinear noise measurement shows that both implementations show equally good prediction of the noise figure even if the device is driven into heavily nonlinear operation by a blocking signal. |
| Starting Page | 472 |
| Ending Page | 475 |
| File Size | 487661 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870361 |
| DOI | 10.1109/EuMIC.2014.6997895 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-10-06 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Association - EUMA |
| Subject Keyword | Microwave integrated circuits Noise semiconductor device modeling HEMTs semiconductor device noise modeling noise Microwave circuits Noise measurement Integrated circuit modeling MODFETs |
| Content Type | Text |
| Resource Type | Article |
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