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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chong Jin Okada, E. Faucher, M. Ducatteau, D. Zaknoune, M. Pavlidis, D. |
| Copyright Year | 2014 |
| Description | Author affiliation: Inst. of Electron., Microelectron. & Nanotechnol., (IEMN), Villeneuve-d'Ascq, France (Chong Jin; Okada, E.; Faucher, M.; Ducatteau, D.; Zaknoune, M.; Pavlidis, D.) |
| Abstract | A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45° with ~ 7 dB insertion loss and a maximum VSWR of 2:1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization. |
| Starting Page | 96 |
| Ending Page | 99 |
| File Size | 169953 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870361 |
| DOI | 10.1109/EuMIC.2014.6997800 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-10-06 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Association - EUMA |
| Subject Keyword | Schottky diodes Phase shifters Insertion loss MMICs Capacitance Gallium nitride Inductors Phase shifter Schottky diode |
| Content Type | Text |
| Resource Type | Article |
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