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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | van der Bent, G. de Hek, P. van der Graaf, M. van Vliet, F.E. |
| Copyright Year | 2014 |
| Description | Author affiliation: TNO, The Hague, Netherlands (van der Bent, G.; de Hek, P.; van der Graaf, M.; van Vliet, F.E.) |
| Abstract | A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %. |
| Starting Page | 333 |
| Ending Page | 336 |
| File Size | 1172945 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870361 |
| DOI | 10.1109/EuMIC.2014.6997860 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-10-06 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Association - EUMA |
| Subject Keyword | Semiconductor device measurement Logic gates Frequency measurement Transistors Gallium nitride Power generation Load modeling |
| Content Type | Text |
| Resource Type | Article |
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