NDLI: A high linearity, low noise amplifier module integrated with fail-safe bypass switch for tower mounted amplifier application

Content Provider	IEEE Xplore Digital Library
Author	Hang-Kiong Lee Fuad, H.-M.
Copyright Year	2011
Description	Author affiliation: Avago Technologies Inc., Wireless Semiconductor Division, Bayan Lepas Free Industrial Zone, 11900 Penang, Malaysia (Hang-Kiong Lee; Fuad, H.-M.)
Abstract	The paper describes the design and realization of a high linearity, low noise amplifier (LNA) module integrated with fail-safe bypass switch for tower mounted amplifier application. In the LNA mode, the device achieves a very low noise figure of 0.75B while maintaining high return losses of 20dB simultaneously. Biased at low current 5V@ 100mA, the module is capable of delivering input P1dB of 3dBm, input third order interception point (IIP3) of 20dBm, and gain of 15.5dB across an entire design bandwidth of 1.85GHz to 1.98GHz. In the bypass mode, the device offers a very low insertion loss of 0.8dB while achieving at least 55dB isolation between alternate paths to eliminate the possibility of oscillation issue. The MMIC LNA is fabricated in a chip size of 650 × $700um^{2}$ using a proprietary 0.25um E-mode pHEMT technology and is housed in a 7 × $10mm^{2}$ multi-chip-on-board (MCOB) package.
Starting Page	268
Ending Page	271
File Size	741806
Page Count	4
File Format	PDF
ISBN	9781612842363
e-ISBN	9782874870231
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-10
Publisher Place	United Kingdom
Access Restriction	Subscribed
Rights Holder	EUROPEAN MICROWAVE ASSOC
Subject Keyword	Temperature measurement Noise figure towwer mounted amplifie PIN photodiodes bypass switch Switches Insertion loss Low noise amplifier pHEMT Frequency measurement FETs MMIC
Content Type	Text
Resource Type	Article

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