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Content Provider | IEEE Xplore Digital Library |
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Author | Gruner, D. Bathich, K. Tanany, A.A. Boeck, G. |
Copyright Year | 2011 |
Description | Author affiliation: Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany (Gruner, D.; Bathich, K.; Tanany, A.A.; Boeck, G.) |
Abstract | In this paper a GaN-HEMT Doherty amplifier targeted for vehicular applications at 6 GHz is presented. The harmonic tuning of the selected bare-die transistors was investigated and implemented in order to improve the overall large-signal performance. The Doherty amplifier was studied and optimized on device reference plane level using two equally sized 8-Watt GaN devices for the main class-AB and the peaking class-C amplifiers. The measured maximum output power was 41.5 dBm with 63 % peak drain efficiency (50 % power added efficiency). At 6 dB output power back-off a drain efficiency of 49 % (42 % power added efficiency) was obtained. The linearity of the amplifier was tested by applying modulated signals according to the IEEE 802.11p standard. At 34 dBm average output power a drain efficiency of 43 % was achieved for this high dynamic range OFDM signal. After digital pre-distortion, the related adjacent channel power ratio could be reduced from −31 dBc to values below −43 dBc without significant impact on the efficiency performance. |
Starting Page | 112 |
Ending Page | 115 |
File Size | 451122 |
Page Count | 4 |
File Format | |
ISBN | 9781612842363 |
e-ISBN | 9782874870231 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-10-10 |
Publisher Place | United Kingdom |
Access Restriction | Subscribed |
Rights Holder | EUROPEAN MICROWAVE ASSOC |
Subject Keyword | Microwave integrated circuits Power amplifiers high-electron mobility transistor Harmonic analysis efficiency enhancement Microwave amplifiers Doherty amplifier Transistors Impedance Gallium nitride Power generation |
Content Type | Text |
Resource Type | Article |
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