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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Taouil, M. Lefter, M. Hamdioui, S. |
| Copyright Year | 2013 |
| Description | Author affiliation: Fac. of EE, Math. & CS, Delft Univ. of Technol., Delft, Netherlands (Taouil, M.; Lefter, M.; Hamdioui, S.) |
| Abstract | 3D-Stacked IC (3D-SIC) based on Through-Silicon-Vias (TSV) is an emerging technology that provides many benefits such as low power, high bandwidth 3D memories and heterogeneous integration. One of the attractive applications making used of such benefits is the stacking of memory dies on logic. System integrators for such application have to provide appropriate test strategy. However, they have to deal with block box IPs as IP providers usually refuse to share the IP content. Moreover, they dislike including JTAG in memory dies. Therefore, developing a low cost and high quality test approaches, while taking these constraints into consideration, is of great importance. This paper presents a framework of interconnect test approaches for memories stacked on logic, and look further than the only proposed JTAG solutions. The benefits and drawbacks of each possible solution is extensively discusses for stacked memories both with and without MBISTs, placed on the memory dies or on a separate logic die. |
| Sponsorship | IEEE |
| Starting Page | 1 |
| Ending Page | 6 |
| File Size | 1148973 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781479935253 |
| DOI | 10.1109/IDT.2013.6727132 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-12-16 |
| Publisher Place | Morocco |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Three-dimensional displays Stacking Random access memory Through-Silicon-Via iBIST Boundary Scan 3D Stacked IC 3D Memory IEEE standards Through-silicon vias Testing |
| Content Type | Text |
| Resource Type | Article |
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