NDLI: A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

Content Provider	IEEE Xplore Digital Library
Author	He, Jin Xiong, Yong-Zhong Li, Jiankang Hou, Debin Hu, Sanming Yan, Dan Lei Arasu, Muthukumaraswamy Annamalai Zhang, Yue Ping
Copyright Year	2014
Description	Author affiliation: Nanyang Technological University Singapore (Zhang, Yue Ping) \|\| Institute of Microelectronics, A∗STAR, Singapore (Xiong, Yong-Zhong; Li, Jiankang; Hou, Debin; Hu, Sanming; Yan, Dan Lei; Arasu, Muthukumaraswamy Annamalai) \|\| Wuhan University, Wuhan, China (He, Jin)
Abstract	This paper presents a fully integrated 166-GHz frequency synthesizer (FS) in 0.13-μm SiGe BiCMOS technology. The proposed FS consists of a 20-GHz phase-locked loop (PLL) and a frequency multiplier including a doubler (×2) and a quadrupler (×4). The FS generates the D-band output signals from 164.08 to 166.19 GHz. At 166.19 GHz, the measured phase noises at 100-kHz and 1-MHz offset frequencies are −54.07 dBc/Hz and −72.29 dBc/Hz, respectively. The total dc power dissipation of the FS is around 110 mW and the chip area is 2.16 × 0.57 $mm^{2}$ including all testing pads. To the best of authors' knowledge, the proposed FS achieves the lowest power dissipation above 100 GHz to date and has great potential to be used for high-integration D-band applications.
Starting Page	156
Ending Page	159
File Size	441275
Page Count	4
File Format	PDF
ISBN	9781479948338
DOI	10.1109/ISICIR.2014.7029436
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-10
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Decision support systems SiGe BiCMOS Abstracts Radiofrequency integrated circuits Solid state circuits D band Indexes Phase locked loops voltage-controlled oscillator (VCO) Frequency synthesizer phase-locked loop (PLL)
Content Type	Text
Resource Type	Article

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