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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Vaddi, R. Kim, T.T. |
| Copyright Year | 2011 |
| Description | Author affiliation: VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore (Vaddi, R.; Kim, T.T.) |
| Abstract | Recently, multi-gate MOSFETs such as double-gate MOSFETs have been identified as inevitable inclusion for future nano-scale circuit design. This paper explores the scope of tied-gate (3T), independent gate (4T), symmetric and asymmetric features of double-gate MOSFETs (DGMOSFETs) for ultra-low power and high efficient rectifiers for RFID applications. Various widely used rectifier topologies such as simple conventional rectifier, self-Vth cancellation (SVC) rectifier and differential drive rectifier etc, have been designed to investigate the better candidate for DGMOSFET technology. Analysis reveals that 3T differential drive rectifier topology shows the maximum power conversion efficiency (PCE) and higher DC output voltage level generation. Second part of the work further explores the effects of 3T/4T and symmetric/asymmetric features of DGMOSFETs on the performance of differential drive rectifier. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFETs have the best power conversion efficiency and the lowest power consumption. |
| Starting Page | 601 |
| Ending Page | 604 |
| File Size | 219482 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612848631 |
| e-ISBN | 9781612848655 |
| DOI | 10.1109/ISICir.2011.6131934 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-12 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Radio frequency Schottky diodes Double-gate MOSFETs Rectifiers Logic gates RFID rectifiers CMOS integrated circuits MOSFETs Ultra-low power Radiofrequency identification |
| Content Type | Text |
| Resource Type | Article |
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