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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jinbo Li Tingting Mo Feng Xu |
| Copyright Year | 2011 |
| Description | Author affiliation: Center for Analog/RF IC(CARFIC), School of Microelectronics, Shanghai Jiao Tong University, Shanghai, China (Jinbo Li; Tingting Mo; Feng Xu) |
| Abstract | A dual mode 900MHz GSM/EDGE Power Amplifier module (PAM) is designed using IBM 0.35μm SiGe BiCMOS technology. Bypass of the third stage is adopted for EDGE mode, leaving the final stage to work in Class E for high efficiency of GSM mode. Additionally, automatic level control (ALC) is employed to improve the power added efficiency (PAE) of low-power EDGE, along with the harmonic termination technique used in the inter-stage matching network for linearity requirement of EDGE. Simulation shows that the proposed PAM exhibits 29.5% PAE and −36.3dBc ACPR at 27dBm output for EDGE mode and 49% PAE at 35dBm output for GSM mode. After ALC, the average PAE of EDGE is boosted from 2.0% to 3.4%, which is 70% improved. |
| Starting Page | 551 |
| Ending Page | 554 |
| File Size | 205968 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612848631 |
| e-ISBN | 9781612848655 |
| DOI | 10.1109/ISICir.2011.6131922 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-12 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | GSM Image edge detection SiGe BiCMOS stage-bypass Power amplifiers Linearity Detectors power amplifier module Harmonic analysis Silicon germanium automatic level control |
| Content Type | Text |
| Resource Type | Article |
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