NDLI: Thermal conductivity of polycrystalline aluminum nitride films: Effects of the microstructure, interfacial thermal resistance and local oxidation

Content Provider	IEEE Xplore Digital Library
Author	Jaramillo-Fernandez, J. Ordonez-Miranda, J. Kassem, W. Oilier, E. Volz, S.
Copyright Year	2015
Description	Author affiliation: Lab. d'Energetique Mol. et Macroscopique, Chatenay - Malabry, France (Jaramillo-Fernandez, J.; Ordonez-Miranda, J.; Kassem, W.; Volz, S.) \|\| Lab. de Recuperation des Micro-energies, Grenoble, France (Oilier, E.)
Abstract	The thermal conductivity of polycrystalline aluminum nitride (AlN) films with inhomogeneous structures is experimentally and theoretically investigated. The influence of the grain morphology and size evolution along the cross plane direction of the films is studied by thickness-dependent 3m measurements on AlN monolayers. For AlN/AlN multilayer samples, the impact of oxygen-related defects localized at the interface between two AlN layers, is also analyzed. When the total thickness of these multilayers is downsized from 1107 nm to 270 nm, their measured effective thermal conductivity reduces by 47%, which is smaller than the corresponding reduction of 58% for monolayers. In multilayers, this decrease is due to the additive contributions of the thermal resistances arising from the AlN and AlN/AlN interfaces. The experimental data are interpreted through an analytical model developed for nanocrystalline films with inhomogeneous structures. It is shown that the size effects on the phonon mean free paths and the intrinsic thermal resistance resulting from the inhomogeneous microstructure predominate as the film thickness increases, whilst the contribution of the interface thermal resistance strengthens when the thickness is scaled down.
Sponsorship	IEEE
Starting Page	1
Ending Page	6
File Size	1080734
Page Count	6
File Format	PDF
ISBN	9781467397056
DOI	10.1109/THERMINIC.2015.7389602
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Thermal resistance Conductivity Thermal conductivity Nonhomogeneous media III-V semiconductor materials Aluminum nitride
Content Type	Text
Resource Type	Article

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