NDLI: Modyfying device structure for high emission current for x-ray tube application from triode-type carbon nanotube cathode

Content Provider	IEEE Xplore Digital Library
Author	Taewon Jeong Do-Yoon Kim Shanghyeun Park Ilhwan Kim YongChurl Kim
Copyright Year	2012
Description	Author affiliation: Composite Material Group, Samsung Electronics, San 14-1, Nongseo-ri, Giheung-eup, Yongin-si, Gyeonggi-do, Korea 446-712 (Taewon Jeong; Do-Yoon Kim; Shanghyeun Park; Ilhwan Kim; YongChurl Kim)
Abstract	The triode-typed field emission (FE) devices using carbon nanotube (CNT) emitters for the x-ray application were fabricated. For the stability of the device, the leakage current between cathode and gate, and the emission current to the anode electrode should be controlled. We realized that the thickness of insulating layer-gap distance between cathode and gate- and the space between the gate electrodes-electron path from cathode and anode- should be controlled for the ratio of the current from cathode to anode (Ia) to the current from cathode to gate (Ig). The ratio of Ia to Ig can be represented the device efficiency. The rectangular-mesh electrode and screen printed insulating layer were controlled for Ia/Ig. When the size of gate hole was the 50 by 700 um — the electrode size is 25 by 700 um — and the thickness of insulator layer was 65 um, the maximum ratio of Ia/(Ia+Ig) was 0.63.
Starting Page	1
Ending Page	4
File Size	158312
Page Count	4
File Format	PDF
ISBN	9781467319836
e-ISBN	9781467319843
e-ISBN	9781467319829
DOI	10.1109/IVNC.2012.6316905
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-07-09
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Cathodes Anodes Insulators Iron Electric fields Ia/Ig cartbon nanotube field emission
Content Type	Text
Resource Type	Article

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