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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shiu-Cheng Lou Chulung Chen Kuang-Yau Teng Chien-Yao Tang I-Nan Lin |
| Copyright Year | 2012 |
| Description | Author affiliation: Department of Physics, Tamkang University, Tamsui, New Taipei, 251 Taiwan, China (Kuang-Yau Teng; Chien-Yao Tang; I-Nan Lin) || Department of Electro-Optical Engineering, Yuan-Ze University, Chung-Li 32003, Taiwan, China (Shiu-Cheng Lou; Chulung Chen) |
| Abstract | The enhancement on the plasma illumination characteristics of a capacity-type plasma devices (CP-devices) utilizing the diamond coated Si-nanotips as cathodes was systematically investigated. The improvement on these characteristics was closely correlated with the electron field emission (EFE) properties of diamond films coated. The microcrystalline diamond films grown a ultrananocrystalline diamond nucleation layer ((MCD/UNCD), which possessed lowest turn-on field for inducing the EFE process (E=4.67 V/μm) with largest EFE current density (J=0.31 $mA/cm^{2}),$ resulted in the best plasma illumination performance for the CP-devices, as compared with those made of the MCD/Si films grown without the nucleation layer. The plasma can be triggered at the lowest threshold field of E=0.24 V/μm. Transmission electron microscopic studies revealed that the secondary microwave plasma enhanced CVD process altered the microstructure of the UNCD nuclear layer, instead of growing a layer of large-grain diamond films on top of the UNCD nuclear layer. The MCD/UNCD films that contained large diamond aggregates evenly distributed among the ultra-small grain matrix, with the induction of a-few-layer graphite, surrounding the large aggregates exhibit superior EFE and plasma illumination characteristics for the MCD/UNCD films/devices, as compared with those of the MCD/Si ones. The presence of graphene-like phase is presumed to be the prime factor resulting in superior EFE properties for the MCD films and the better plasma illumination characteristics for the CP-devices. |
| Starting Page | 1 |
| Ending Page | 10 |
| File Size | 1334622 |
| Page Count | 10 |
| File Format | |
| ISBN | 9781467319836 |
| e-ISBN | 9781467319843 |
| e-ISBN | 9781467319829 |
| DOI | 10.1109/IVNC.2012.6316890 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-07-09 |
| Publisher Place | Korea (South) |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Films Diamond-like carbon Silicon Plasma devices Lighting Argon transmission electron microscopy Microcrystalline-ultrananocrystalline diamond composite films electron field emission properties plasma illumination characteristics |
| Content Type | Text |
| Resource Type | Article |
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