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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shao-Hua Hsu Weng Poo Kang Davidson, J.L. |
| Copyright Year | 2010 |
| Description | Author affiliation: Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA (Shao-Hua Hsu; Weng Poo Kang; Davidson, J.L.) |
| Abstract | A vertically configured nanodiamond vacuum field emission transistor (VFET) is developed. The device is fabricated on a silicon-on-insulator (SOI) substrate, using the active silicon layer patterned with inverted pyramidal mold for nanodiamond deposition and as the self-aligned gate of the final VFET construct. Gate modulation of the emission current is observed with a relatively low gate turn-on voltage. The I characteristics of the device show distinct linear, saturation and cutoff regions, demonstrating the transistor behaviors. The VFET shows a high dc voltage gain of ~ 1000, an ac voltage gain of ~ 44 and a phase shift of 180° when operated as a voltage amplifier. This nanodiamond VFET promises potential applications in vacuum microelectronics, including integrated circuits. |
| Starting Page | 201 |
| Ending Page | 202 |
| File Size | 918325 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424478897 |
| e-ISBN | 9781424478880 |
| DOI | 10.1109/IVNC.2010.5563234 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-07-26 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates Anodes Transistors Silicon Performance evaluation Nanoscale devices Nitrogen Transistor characteristics Nanodiamond Vertically configured emitter Vacuum field emission devices |
| Content Type | Text |
| Resource Type | Article |
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