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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ikeda, Y. Sakata, T. Morii, H. Shiozawa, K. Neo, Y. Aoki, T. Mimura, H. |
| Copyright Year | 2006 |
| Description | Author affiliation: Res. Inst. of Electron., Shizuoka Univ., Hamamatsu (Ikeda, Y.; Sakata, T.; Morii, H.; Shiozawa, K.; Neo, Y.; Aoki, T.; Mimura, H.) |
| Abstract | In this paper, a CdTe X-ray sensing device which consists of a CdTe pin diode and a field emitter is fabricated. The CdTe pin diode was fabricated by an excimer laser doping method, which was applied to form an n-type CdTe layer. An indium thin layer was evaporated on the p-type CdTe as a dopant material, and then an n-type CdTe layer was formed by irradiating a KrF laser to the dopant layer in a high-pressure Ar ambient. The field emitter used in this experiment was sputter-induced carbon nanoneedle field emitters. A positive bias voltage of ~200 V was applied to the n-region of the CdTe diode and output currents flowing were measured in the CdTe by supplying an electron beam on the p-region of the CdTe. The electron beam current supplied from the emitter was 10 muA. The output current is shown to be proportional to the X-ray tube current which is also proportional to the X-ray intensity. Also, output current is obtained only when the electron beam is irradiated |
| Starting Page | 395 |
| Ending Page | 396 |
| File Size | 544591 |
| Page Count | 2 |
| File Format | |
| ISBN | 1424404010 |
| DOI | 10.1109/IVNC.2006.335234 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-07-17 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electron beams X-ray lasers Doping Indium Optical materials Argon Carbon dioxide Voltage Diodes Current measurement |
| Content Type | Text |
| Resource Type | Article |
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